MEMS switches having non-metallic crossbeams

A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums

Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters

Switches with low insertion loss and high isolation are required for switched line phase shifters and the transmit/receive switch at the front end of communication systems. A Finite Ground Coplanar (FGC) waveguide capacitive, shunt MEMS switch has been implemented on high resistivity Si. The switch has demonstrated an insertion loss of less than 0.3 dB and a return loss greater than 15 dB from 10 to 20, GHz. The switch design, fabrication, and characteristics are presented

Microelectromechanical Switches for Phased Array Antennas

Preliminary results are presented on the fabrication and testing of a MicroElectro-Mechanical (MEM) microstrip series switch. This switch is being developed for use in a K-band phased array antenna that NASA will use for communication links in its Earth orbiting satellites. Preliminary insertion loss and isolation measurements are presented